SPICE PNP

SPICE-compatible Gummel-Poon PNP Transistor

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Libraries:
Simscape / Electrical / Additional Components / SPICE Semiconductors

Description

The SPICE PNP block represents a SPICE-compatible four-terminal Gummel-Poon PNP bipolar junction transistor. A capacitor connects the substrate port, sx, to the transistor base, bx. Therefore, the device is equivalent to a three-terminal transistor when you use the default value of 0 for the C-S junction capacitance, CJS parameter and connect the substrate port to any other port, including the emitter port, ex, or the collector port, cx.

SPICE, or Simulation Program with Integrated Circuit Emphasis, is a simulation tool for electronic circuits. You can convert some SPICE subcircuits into equivalent Simscape™ Electrical™ models using the Environment Parameters block and SPICE-compatible blocks from the Additional Components library. For more information, see subcircuit2ssc.

Equations

Variables for the SPICE PNP block equations include:

• Variables that you define by specifying parameters for the SPICE PNP block. The visibility of some of the parameters depends on the value that you set for other parameters. For more information, see Parameters.

• Geometry-adjusted variables, which depend on several values that you specify using parameters for the SPICE PNP block. For more information, see Geometry-Adjusted Variables.

• Temperature, T, which is 300.15 K by default. You can use a different value by specifying parameters for the SPICE PNP block or by specifying parameters for both the SPICE PNP block and an Environment Parameters block. For more information, see Transistor Temperature.

• Temperature-dependent variables. For more information, see Temperature Dependence.

• Minimal conductance, GMIN, which is 1e–12 1/Ohm by default. You can use a different value by specifying a parameter for an Environment Parameters block. For more information, see Minimal Conduction.

Geometry-Adjusted Variables

Several variables in the equations for the SPICE PNP bipolar junction transistor model consider the geometry of the device that the block represents. These geometry-adjusted variables depend on variables that you define by specifying SPICE PNP block parameters. The geometry-adjusted variables depend on these variables:

• AREA — Area of the device

• SCALE — Number of parallel connected devices

• The associated unadjusted variable

The table includes the geometry-adjusted variables and the defining equations.

Variable	Description	Equation
ISd	Geometry-adjusted transport saturation current	$$I{S}_d=IS*AREA*SCALE$$
IKFd	Geometry-adjusted forward knee current	$$IK{F}_d=IKF*AREA*SCALE$$
ISd	Geometry-adjusted base-emitter leakage current	$$IS{E}_d=ISE*AREA*SCALE$$
IKRd	Geometry-adjusted reverse knee current	$$IK{R}_d=IKR*AREA*SCALE$$
ISCd	Geometry-adjusted base-collector leakage current	$$IS{C}_d=ISC*AREA*SCALE$$
IRBd	Geometry-adjusted half base resistance current	$$IR{B}_d=IRB*AREA*SCALE$$
CJEd	Geometry-adjusted base-emitter depletion capacitance	$$CJ{E}_d=CJE*AREA*SCALE$$
ITFd	Geometry-adjusted forward transit time coefficient	$$IT{F}_d=ITF*AREA*SCALE$$
CJCd	Geometry-adjusted base-collector depletion capacitance	$$CJ{C}_d=CJC*AREA*SCALE$$
CJSd	Geometry-adjusted collector-substrate junction capacitance	$$CJ{S}_d=CJS*AREA*SCALE$$
RBd	Geometry-adjusted zero-bias base resistance	$$R{B}_d=\frac{RB}{AREA*SCALE}$$
RBMd	Geometry-adjusted minimum base resistance	$$RB{M}_d=\frac{RBM}{AREA*SCALE}$$
REd	Geometry-adjusted emitter resistance	$$R{E}_d=\frac{RE}{AREA*SCALE}$$
RCd	Geometry-adjusted collector resistance	$$R{C}_d=\frac{RC}{AREA*SCALE}$$

Transistor Temperature

You can use these options to define transistor temperature, T:

• Fixed temperature — The block uses a temperature that is independent from the circuit temperature when the Model temperature dependence using parameter in the Temperature settings of the SPICE PNP block is set to Fixed temperature. For this model, the block sets T equal to TFIXED.

• Device temperature — The block uses a temperature that depends on circuit temperature when the Model temperature dependence using parameter in the Temperature settings of the SPICE PNP block is set to Device temperature. For this model, the block defines temperature as

  $$T=T_C+TOFFSET$$

  Where:

  • T_C is the circuit temperature.

    If there is no Environment Parameters block in the circuit, T_C is equal to 300.15 K.

    If there is an Environment Parameters block in the circuit, T_C is equal to the value that you specify for the Temperature parameter in the SPICE settings of the Environment Parameters block. The default value for the Temperature parameter is 300.15 K.

  • TOFFSET is the offset local circuit temperature.

Minimal Conduction

Minimal conductance, GMIN, has a default value of 1e–12 1/Ohm. To specify a different value:

1. If there is not an Environment Parameters block in the circuit, add one.

2. In the SPICE settings of the Environment Parameters block, specify the desired GMIN value for the GMIN parameter.

Current-Voltage and Base Charge Model

The current-voltage relationships and base charge relationships for the transistor are described in terms of Base-Emitter and Base-Collector Junction Currents, Terminal Currents, and Base Charge Model. As applicable, the model parameters are first adjusted for temperature.

Base-Emitter and Base-Collector Junction Currents

The base-emitter junction current depends on the emitter-base voltage, V_EB such that:

• When $$V_{EB}>80*V_{TF}$$:

  $$I_{bef}=I{S}_d*\left(\left(\frac{V_{EB}}{V_{TF}}-79\right)*e^{80}-1\right)+G_{\min }*V_{EB}$$

  $$I_{bee}=IS{E}_d*\left(\left(V_{EB}-80*V_{TF}+V_{TE}\right)*\frac{e^{(80*V_{TF}/V_{TE})}}{V_{TE}}-1\right)$$

• When $$V_{EB}\le 80*V_{TF}$$:

  $$I_{bef}=I{S}_d*\left(e^{(V_{EB}/V_{TF})}-1\right)+G_{\min }*V_{EB}$$

  $$I_{bee}=IS{E}_d*\left(e^{(V_{EB}/V_{TE})}-1\right)$$

The base-collector junction current depends on the collector-base voltage, V_CB, such that:

• When $$V_{CB}>80*V_{TR}$$:

  $$I_{bcr}=I{S}_d*\left(\left(\frac{V_{CB}}{V_{TR}}-79\right)*e^{80}-1\right)+G_{\min }*V_{CB}$$

  $$I_{bcc}=IS{C}_d*\left(\left(V_{CB}-80*V_{TR}+V_{TC}\right)*\frac{e^{(80*V_{TR}/V_{TC})}}{V_{TC}}-1\right)$$

• When $$V_{CB}\le 80*V_{TR}$$:

  $$I_{bcr}=IS{C}_d*(e^{(V_{CB}/V_{TR})}-1)+G_{min}*V_{CB}$$

  $$I_{bcc}=IS{C}_d*\left(e^{(V_{CB}/V_{TC})}-1\right)$$

Where:

• V_EB is the emitter-base voltage.

• V_CB is the collector-base voltage.

• V_TE is the emitter thermal voltage, such that $$V_{TE}=NE*k*T/q$$.

• V_TC is the collector thermal voltage, such that $$V_{TC}=NC*k*T/q$$.

• V_TF is the forward thermal voltage, such that $$V_{TF}=NF*k*T/q$$.

• V_TR is the reverse thermal voltage, such that $$V_{TR}=NR*k*T/q$$.

• ISC_d is the geometry-adjusted base-collector leakage current.

• ISE_d is the geometry-adjusted base-emitter leakage current.

• NE is the base-emitter emission coefficient.

• NC is the base-collector emission coefficient.

• NF is the forward emission coefficient.

• NR is the reverse emission coefficient.

• q is the elementary charge on an electron.

• k is the Boltzmann constant.

• T is the transistor temperature. For more information, see Transistor Temperature.

• G_min is the minimum conductance. For more information, see Minimal Conduction.

Terminal Currents

The terminal currents are calculated as:

$$I_B=-\left(\frac{I_{bef}}{BF}+I_{bee}+\frac{I_{bcr}}{BR}+I_{bcc}\right)$$

$$I_C=-\left(\frac{I_{bef}-I_{bcr}}{q_b}-\frac{I_{bcr}}{BR}-I_{\text{bcc}}\right)$$

Where:

• I_B is the base terminal current.

• I_C is the collector terminal current.

• BF is the forward beta.

• BR is the reverse beta.

Base Charge Model

The base charge, q_b, is calculated using these equations:

$$q_b=\frac{q_1}{2}\left(1+\sqrt{0.5\left(\sqrt{{(1+4q_2-eps)}^2+ep{s}^2}+1+4q_2-eps\right)+eps}\right)$$

$$q_1={\left(1-\frac{V_{CB}}{VAF}-\frac{V_{EB}}{VAR}\right)}^{-1}$$

$$q_2=\frac{I_{bef}}{IK{F}_d}+\frac{I_{bcr}}{IK{R}_d}$$

Where:

• q_b is the base charge.

• VAF is the forward Early voltage.

• VAR is the reverse Early voltage.

• IKF_d is the geometry-adjusted forward knee current.

• IKR_d is the geometry-adjusted reverse knee current.

• eps is 1e-4.

Base Resistance Model

You can use these options to model base resistance, r_bb:

• If you use the default value of infinity for the Half base resistance cur, IRB parameter, the block calculates the base resistance as

  $$r_{bb}=RB{M}_d+\frac{R{B}_d-RB{M}_d}{q_b}$$

  Where:

  • r_bb is base resistance.

  • RBM_d is the geometry-adjusted minimum base resistance.

  • RB_d is the geometry-adjusted zero-bias base resistance.

• If you specify a finite value for the Half base resistance cur, IRB parameter, the block calculates the base resistance as

  $$r_{bb}=RB{M}_d+3*\left(R{B}_d-RB{M}_d\right)*\left(\frac{\tan z-z}{z*{\tan }^{2}z}\right)$$

  Where

  $$z=\frac{\sqrt{1+144I_B/\left({\pi }^{2}IR{B}_d\right)}-1}{\left(24/{\pi }^2\right)\sqrt{\left(I_B/IR{B}_d\right)}}$$

Transit Charge Modulation Model

If you specify nonzero values for the Coefficient of TF, XTF parameter, the block models transit charge modulation by scaling the forward transit time as

$$T{F}_{\mathrm{mod}}=\frac{TF*\left[1+XTF*e^{V_{CB}/\left(1.44V_{TF}\right)}{\left(\frac{I_{EB}}{I_{EB}+IT{F}_d}\right)}^2\right]}{q_b}$$

Where ITF_d is the geometry-adjusted coefficient of the forward transit time.

Junction Charge Model

The block lets you model junction charge. The base-collector charge, Q_bc, and the base-emitter charge, Q_be, depend on an intermediate value, Q_dep. As applicable, the model parameters are first adjusted for temperature.

• For the internal base-emitter junctions

  $$Q_{be}=T{F}_{\mathrm{mod}}*I_{be}+Q_{dep}$$

• For the internal base-collector junctions

  $$Q_{bc}=TR*I_{bc}+XCJC*Q_{dep}$$

• For the external base-collector junctions

  $$Q_{b_{ext}c}=(1-XCJC)*Q_{dep}$$

Q_dep depends on the junction voltage, V_jct (V_BE for the base-emitter junction and V_BC for the base-collector junction), as follows.

Applicable Range of Vjct Values	Corresponding Qdep Equation
$$V_{jct}<FC*VJ$$	$$Q_{dep}=C_{jct}*VJ*\frac{1-{\left(1-V_{jct}/VJ\right)}^{(1-MJ)}}{1-MJ}$$
$$V_{jct}\ge FC*VJ$$	$$Q_{dep}=C_{jct}*\left[F1+\frac{F3*\left(V_{jct}-FC*VJ\right)+\frac{MJ*\left[V_{jct}{}^2-{\left(FC*VJ\right)}^2\right]}{2*VJ}}{F2}\right]$$

Where:

• FC is the capacitance coefficient.

• VJ is:

  • The base-emitter built-in potential, VJE, for the base-emitter junction.

  • The base-collector built-in potential, VJC, for the base-collector junction.

• MJ is:

  • The base-emitter exponential factor, MJE, for the base-emitter junction.

  • The base-collector exponential factor, MJC, for the base-collector junction.

• C_jct is:

  • The geometry-adjusted base-emitter depletion capacitance, CJE_d, for the base-emitter junction.

  • The geometry-adjusted base-collector depletion capacitance, CJC_d, for the base-collector junction.

• $$F1=VJ*\left(1-{\left(1-FC\right)}^{(1-MJ)}\right)/\left(1-MJ\right)$$

• $$F2={\left(1-FC\right)}^{(1+MJ)}$$

• $$F3=1-FC*\left(1+MJ\right)$$

The collector-substrate charge, Q_cs, depends on the substrate-collector voltage, V_sc. As applicable, the model parameters are first adjusted for temperature.

Applicable Range of Vsc Values	Corresponding Qcs Equation
$$V_{sc}<0$$	$$Qcs=CJ{S}_d*VJS*\left(\frac{1-{\left(1-V_{sc}/VJS\right)}^{(1-MJS)}}{1-MJS}\right)$$
$$V_{sc}\ge 0$$	$$Qcs=CJ{S}_d*\left(1+MJS*V_{sc}/(2*VJS)\right)*V_{sc}$$

Where:

• CJS_d is the geometry-adjusted collector-substrate junction capacitance.

• VJS is the substrate built-in potential.

• MJS is the substrate exponential factor.

Temperature Dependence

The relationship between the saturation current, IS_d, and the transistor temperature, T, is

$$IS(T)=I{S}_d*{\left(T/T_{meas}\right)}^{XTI}*e^{\left(\frac{T}{T_{meas}}-1\right)*\frac{EG}{V_t}}$$

Where:

• IS_d is the geometry-adjusted transport saturation current.

• T_meas is the parameter extraction temperature.

• XTI is the transport saturation current temperature exponent.

• EG is the energy gap.

• V_t = kT/q.

The relationship between the base-emitter junction potential, VJE, and the transistor temperature, T, is

$$VJE(T)=VJE*\left(\frac{T}{T_{meas}}\right)-\frac{3*k*T}{q}*\log \left(\frac{T}{T_{meas}}\right)-\left(\frac{T}{T_{meas}}\right)*E{G}_{T_{meas}}+E{G}_T$$

Where:

• VJE is the base-emitter built-in potential.

• $$E{G}_{T_{meas}}=1.16eV-\left(7.02e-4*T_{meas}{}^2\right)/\left(T_{meas}+1108\right)$$

• $$E{G}_T=1.16eV-\left(7.02e-4*T^2\right)/\left(T+1108\right)$$

The block uses the VJE(T) equation to calculate the base-collector junction potential by substituting VJC, the base-collector built-in potential, for VJE.

The relationship between the base-emitter junction capacitance, CJE, and the transistor temperature, T, is

$$CJE(T)=CJ{E}_d*\left[1+MJE*\left(400e-6*\left(T-T_{meas}\right)-\frac{VJE(T)-VJE}{VJE}\right)\right]$$

Where:

• CJE_d is the geometry-adjusted base-emitter depletion capacitance.

• MJE is the base-emitter exponential factor.

The block uses the CJE(T) equation to calculate the base-collector junction capacitance by substituting CJC_d, geometry-adjusted base-collector depletion capacitance, for CJE_d and MJC, base-collector exponential factor, for MJE.

The relationship between the forward and reverse beta and the transistor temperature, T, is

$$\beta (T)=\beta *{\left(\frac{T}{T_{meas}}\right)}^{XTB}$$

Where:

• β is the forward beta or reverse beta.

• XTB is the beta temperature exponent.

The relationship between the base-emitter leakage current, ISE, and the transistor temperature, T, is

$$ISE(T)=IS{E}_d*{\left(\frac{T}{T_{meas}}\right)}^{\text{-XTB}}\text{ * }{\left(\frac{IS(T)}{I{S}_d}\right)}^{1/NE}$$

Where:

• ISE_d is the geometry-adjusted base-emitter leakage current.

• NE is the base-emitter emission coefficient.

The block uses this equation to calculate the base-collector leakage current by substituting, ISC_d, the geometry-adjusted base-collector leakage current for ISE_d and NC, the base-collector emission coefficient, for NE.

Assumptions and Limitations

• The block does not support noise analysis.

• The block applies initial conditions across junction capacitors and not across the block ports.

Ports

Conserving

bx — Base terminal

electrical

Electrical conserving port associated with the transistor base terminal.

cx — Collector terminal

electrical

Electrical conserving port associated with the transistor collector terminal.

ex — Emitter terminal

electrical

Electrical conserving port associated with the transistor emitter terminal.

sx — Substrate terminal

electrical

Electrical conserving port associated with the transistor substrate terminal.

Parameters

Main

Device area, AREA — Device area

1.0 m^2 (default) | positive scalar

Device area. The value must be greater than 0.

Number of parallel devices, SCALE — Number of parallel devices

1 (default) | positive scalar

Number of parallel transistors that the block represents. The value must be greater than 0.

Forward Gain

Transport saturation current, IS — Saturation current magnitude

1e-16 A/m^2 (default) | positive scalar

Magnitude of the current at which the transistor saturates. The value must be greater than 0.

Forward beta, BF — Ideal maximum forward beta

100 (default) | positive scalar

Ideal maximum forward beta. The value must be greater than 0.

Forward emission coefficient, NF — Forward emission coefficient

1 (default) | positive scalar

Forward emission coefficient or ideality factor. The value must be greater than 0.

Forward Early voltage, VAF — Forward Early voltage

Inf V (default) | nonnegative scalar

Forward Early voltage. The value must be greater than or equal to 0.

Forward knee current, IKF — Forward-beta high-current roll-off current

Inf A/m^2 (default) | nonnegative scalar

Current value at which forward-beta high-current roll-off occurs. The value must be greater than or equal to 0.

B-E leakage current, ISE — Base-emitter leakage current

0 A/m^2 (default) | nonnegative scalar

Base-emitter leakage current. The value must be greater than or equal to 0.

B-E emission coefficient, NE — Base-emitter emission coefficient

1.5 (default) | positive scalar

Base-emitter emission coefficient or ideality factor. The value must be greater than 0.

Reverse Gain

Reverse beta, BR — Ideal maximum reverse beta

1 (default) | positive scalar

Ideal maximum reverse beta. The value must be greater than 0.

Reverse emission coefficient, NR — Reverse emission coefficient

1 (default) | positive scalar

Reverse emission coefficient or ideality factor. The value must be greater than 0.

Reverse Early voltage, VAR — Reverse Early voltage

Inf V (default) | nonnegative scalar

Reverse Early voltage. The value must be greater than or equal to 0.

Reverse knee current, IKR — Reverse-beta high-current roll-off current

Inf A/m^2 (default) | nonnegative scalar

Current value at which reverse-beta high-current roll-off occurs. The value must be greater than or equal to 0.

B-C leakage current, ISC — Base-collector leakage current

0 A/m^2 (default) | nonnegative scalar

Base-collector leakage current. The value must be greater than or equal to 0.

B-C emission coefficient, NC — Base-collector emission coefficient

2 (default) | positive scalar

Base-collector emission coefficient or ideality factor. The value must be greater than 0.

Resistors

Zero-bias base resistance, RB — Base resistance

1 m^2*Ohm (default) | nonnegative scalar

Maximum resistance of the base. The value must be greater than or equal to 0.

Half base resistance cur, IRB — Base resistance half zero-bias drop current

Inf A/m^2 (default) | nonnegative scalar

Base current at which the base resistance has dropped to half of its zero-bias value. The value must be greater than or equal to 0. If you do not want to model the change in base resistance as a function of base current, use the default value of Inf.

Minimum base resistance, RBM — Minimum base resistance

0 m^2*Ohm (default) | scalar < RB

Minimum resistance of the base. The value must be less than or equal to the Zero-bias base resistance, RB parameter value.

Emitter resistance, RE — Emitter resistance

1e-4 m^2*Ohm (default) | nonnegative scalar

Resistance of the emitter. The value must be greater than or equal to 0.

Collector resistance, RC — Collector resistance

0.01 m^2*Ohm (default) | nonnegative scalar

Resistance of the collector. The value must be greater than or equal to 0.

Capacitance

Model junction capacitance — Junction capacitance model

No (default) | Yes

Options for modeling the junction capacitance:

• No — Do not include junction capacitance in the model. This is the default option.

• Yes — Include junction capacitance in the model.

Dependencies

Selecting Yes for the Model junction capacitance parameter exposes other Capacitance parameters and these capacitance junction settings:

• B-E Capacitance — Base-emitter parameters

• B-C Capacitance — Base-collector parameters

• C-S Capacitance — Collector-substrate parameters

Capacitance coefficient, FC — Capacitance coefficient

0.5 (default) | 0 ≤ FC < 0.95 | scalar

Fitting coefficient, FC, that quantifies the decrease of the depletion capacitance with applied voltage. The value must be greater than or equal to 0 and less than 0.95.

Dependencies

This parameter is only visible when you select Yes for the Model junction capacitance parameter.

Specify initial condition — Initial condition model

No (default) | Yes

Options for specifying initial conditions:

• No — Do not specify an initial condition for the model. This is the default option.

• Yes — Specify the initial transistor conditions.

  Note

  The block applies the initial transistor voltages across the junction capacitors and not across the ports.

Dependencies

This parameter is only visible when you select Yes for the Model junction capacitance parameter.

Selecting Yes for the Specify initial condition parameter exposes related parameters.

Initial condition voltage ICVBE — Initial base-emitter voltage

0 V (default) | scalar

Base-emitter voltage at the start of the simulation.

Dependencies

This parameter is only visible when you select Yes for the Model junction capacitance and Yes for the Specify initial condition parameter.

Initial condition voltage ICVCE — Initial base-collector voltage

0 V (default) | scalar

Base-collector voltage at the start of the simulation.

Dependencies

This parameter is only visible when you select Yes for the Model junction capacitance and Yes for the Specify initial condition parameter.

B-E Capacitance

These settings are exposed if you select Yes for the Model junction capacitance parameter in the Capacitance settings.

B-E depletion capacitance, CJE — Base-emitter junction depletion capacitance

0 F/m^2 (default) | nonnegative scalar

Depletion capacitance across the base-emitter junction. The value must be greater than or equal to 0.

Dependencies

This parameter is only visible when you select Yes for the Model junction capacitance parameter.

B-E built-in potential, VJE — Base-emitter junction potential

0.75 V (default) | scalar | 0.01 ≤ VJE

Base-emitter junction potential. The value must be greater than or equal to 0.01.

Dependencies

This parameter is only visible when you select Yes for the Model junction capacitance parameter.

B-E exponential factor, MJE — Base-emitter junction grading coefficient

0.33 (default) | scalar | 0 ≤ MJC ≤ 0.9

Grading coefficient for the base-emitter junction. The value must be greater than or equal to 0 and less than or equal to 0.9.

Dependencies

This parameter is only visible when you select Yes for the Model junction capacitance parameter.

Forward transit time, TF — Minority carrier transit time

0 s (default) | nonnegative scalar

Transit time of the minority carriers that cause diffusion capacitance when the base-emitter junction is forward-biased. The value must be greater than or equal to 0.

Dependencies

This parameter is only visible when you select Yes for the Model junction capacitance parameter.

Coefficient of TF, XTF — Base-emitter transit time bias dependence coefficient

0 (default) | nonnegative scalar

Coefficient for the base-emitter bias dependence of the transit time, which produces a charge across the base-emitter junction. The value must be greater than or equal to 0. If you do not want to model the effect of base-emitter bias on transit time, use the default value of 0.

Dependencies

This parameter is only visible when you select Yes for the Model junction capacitance parameter.

VBC dependence of TF, VTF — Base-collector transit time bias dependence coefficient

Inf V (default) | nonnegative scalar

Coefficient for the base-collector bias dependence of the transit time. The value must be greater than or equal to 0.

Dependencies

This parameter is only visible when you select Yes for the Model junction capacitance parameter.

Coefficient of TF, ITF — Collector current transit time dependence coefficient

0 A/m^2 (default) | nonnegative scalar

Coefficient for the dependence of the transit time on collector current. The value must be greater than or equal to 0. If you do not want to model the effect of collector current on transit time, use the default value of 0.

Dependencies

This parameter is only visible when you select Yes for the Model junction capacitance parameter.

B-C Capacitance

These settings are exposed if you select Yes for the Model junction capacitance parameter in the Capacitance settings.

B-C depletion capacitance, CJC — base-collector junction depletion capacitance

0 F/m^2 (default) | positive scalar

Depletion capacitance across the base-collector junction. The value must be greater than 0.

Dependencies

This parameter is only visible when you select Yes for the Model junction capacitance parameter.

B-C built-in potential, VJC — Base-collector junction potential

0.75 V (default) | scalar | 0.01 ≤ VJC

Base-collector junction potential. The value must be greater than or equal to 0.01 V.

Dependencies

This parameter is only visible when you select Yes for the Model junction capacitance parameter.

B-C exponential factor, MJC — Base-collector junction grading coefficient

0.33 (default) | 0 ≤ MJC ≤ 0.9

Grading coefficient for the base-collector junction. The value must be greater than or equal to 0 and less than or equal to 0.9.

Dependencies

This parameter is only visible when you select Yes for the Model junction capacitance parameter.

B-C capacitance fraction, XCJC — Base-collector depletion capacitance fraction

1 (default) | scalar | 0 ≤ XCJC ≤ 1

Fraction of the base-collector depletion capacitance that is connected between the internal base and the internal collector. The rest of the base-collector depletion capacitance is connected between the external base and the internal collector. The value must be greater than or equal to 0 and less than or equal to 1.

Dependencies

This parameter is only visible when you select Yes for the Model junction capacitance parameter.

Reverse transit time, TR — Minority carrier transit time

0 s (default) | nonnegative scalar

Transit time of the minority carriers that cause diffusion capacitance when the base-collector junction is forward-biased. The value must be greater than or equal to 0.

Dependencies

This parameter is only visible when you select Yes for the Model junction capacitance parameter.

C-S Capacitance

These settings are exposed if you select Yes for the Model junction capacitance parameter in the Capacitance settings.

C-S junction capacitance, CJS — Collector-substrate junction capacitance

0F/m^2 (default) | nonnegative scalar

Collector-substrate junction capacitance. The value must be greater than or equal to 0.

Dependencies

This parameter is only visible when you select Yes for the Model junction capacitance parameter.

Substrate built-in potential, VJS — Substrate potential

0.75 V (default) | scalar | 0.01 ≤ VJS

Potential of the substrate. The value must be greater than or equal to 0.01 V.

Dependencies

This parameter is only visible when you select Yes for the Model junction capacitance parameter.

Substrate exponential factor, MJS — Collector-substrate junction grading coefficient

0 (default) | scalar | 0 ≤ MJS ≤ 0.9

Grading coefficient for the collector-substrate junction. The value must be greater than or equal to 0 and less than or equal to 0.9.

Dependencies

This parameter is only visible when you select Yes for the Model junction capacitance parameter.

Temperature

Model temperature dependence using — Temperature dependence model

Device temperature (default) | Fixed temperature

Select one of these options for modeling the transistor temperature dependence:

• Device temperature — Use the device temperature to model temperature dependence.

• Fixed temperature — Use a temperature that is independent of the circuit temperature to model temperature dependence.

For more information, see Transistor Temperature.

Dependencies

Selecting Device temperature exposes the Offset local circuit temperature, TOFFSET parameter. Selecting Fixed temperature exposes the Fixed circuit temperature, TFIXED parameter.

Beta temperature exponent, XTB — Forward and reverse beta temperature exponent

0 (default) | nonnegative scalar

Forward and reverse beta temperature exponent that models base current temperature dependence. The value must be greater than or equal to 0.

Energy gap, EG — Energy gap

1.11 eV (default) | EG ≥ 0.1 | scalar

Energy gap that affects the increase in the saturation current as temperature increases. The value must be greater than or equal to 0.1.

Temperature exponent for IS, XTI — Saturation current exponential increase order

3 (default) | nonnegative scalar

Order of the exponential increase in the saturation current as temperature increases. The value must be greater than or equal to 0.

Offset local circuit temperature, TOFFSET — Local circuit temperature offset

0 K (default) | scalar

Amount by which the transistor temperature differs from the circuit temperature.

Dependencies

This parameter is only visible when you select Device temperature for the Model temperature dependence using parameter.

Fixed circuit temperature, TFIXED — Fixed circuit temperature

300.15 K (default) | positive scalar

Transistor simulation temperature. The value must be greater than 0 K.

Dependencies

This parameter is only visible when you select Fixed temperature for the Model temperature dependence using parameter.

Parameter extraction temperature, TMEAS — Parameter extraction temperature

300.15 K (default) | positive scalar

Temperature at which the transistor parameters are measured. The value must be greater than 0 K.

References

[1] G. Massobrio and P. Antognetti. Semiconductor Device Modeling with SPICE. 2nd Edition. New York: McGraw-Hill, 1993.

Extended Capabilities

C/C++ Code Generation
Generate C and C++ code using Simulink® Coder™.

Version History

Introduced in R2008a