# ee.spice.semiconductorSubcircuit2lookup

Generate lookup table data for semiconductors from SPICE subcircuit

## Syntax

``lookuptable = ee.spice.semiconductorSubcircuit2lookup(subcircuitFile,subcircuitName)``
``lookuptable = ee.spice.semiconductorSubcircuit2lookup(subcircuitFile,subcircuitName,Name=Value)``

## Description

example

````lookuptable = ee.spice.semiconductorSubcircuit2lookup(subcircuitFile,subcircuitName)` returns the lookup table data for the SPICE subcircuit file at the path `subcircuitFile` and with the file name `subcircuitName`. Use this function to create lookup table data that characterizes an N-Channel MOSFET, P-Channel MOSFET, or N-Channel IGBT block. This function supports SIMetrix 8.4. ```
````lookuptable = ee.spice.semiconductorSubcircuit2lookup(subcircuitFile,subcircuitName,Name=Value)` creates a SPICE subcircuit file with the specified name-value arguments.```

## Examples

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Generate the lookup table data for the current-voltage characteristics from the output characteristics of a SPICE subcircuit.

First define the path of the subcircuit, the name of the subcircuit, and the path of the SPICE executable file.

```subcircuitFile = [matlabroot '\toolbox\physmod\elec\eedemos\applications\devicecharacteristics\IAUC100N04S6L014.cir']; subcircuitName = "IAUC100N04S6L014"; SPICEPath = "C:\Program Files\SIMetrix850\bin64\Sim.exe";```

Then generate the lookup table data by calling the `semiconductorSubcircuit2lookup` function.

```lookuptable = ... ee.spice.semiconductorSubcircuit2lookup(subcircuitFile, ... subcircuitName, 'SPICEPath', SPICEPath, 'terminals', [1,2,3, 0, 5], ... 'flagIdsVgs', 0, 'flagIdsVds', 1, 'T', [27 50 150]);```

## Input Arguments

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File path of the SPICE subcircuit file from which to generate the data, specified as a character vector.

File path of the SPICE subcircuit file from which to generate the data, specified as a character vector.

### Name-Value Arguments

Specify optional pairs of arguments as `Name1=Value1,...,NameN=ValueN`, where `Name` is the argument name and `Value` is the corresponding value. Name-value arguments must appear after other arguments, but the order of the pairs does not matter.

Example: `'terminals'=[1,2,3,0,5]`

Name of the SPICE simulation engine executable file, specified as `SIMetrix`.

Path of the SPICE simulation engine executable file, specified as a character vector or a string.

Path of the generated SPICE netlists and the simulation output files, specified as a character vector or a string. If you do not specify this argument, the function uses a temporary directory to store the files and removes the temporary directory when the function completes.

Vector of terminal orders in the SPICE subcircuit, specified as a vector of scalars. The values of this vector define the ports of the semiconductor device that each node of the SPICE subcircuit connects to:

• `0` — No connection

• `1`D for MOSFET or C for IGBT

• `2`G for MOSFET and IGBT

• `3`S for MOSFET or E for IGBT

• `4`B for MOSFET and IGBT

• `5`Tcase for MOSFET and IGBT

The size of this vector must match the number of nodes specified in the subcircuit.

For example, if your SPICE subcircuit is ```.SUBCKT IAUC100N04S6L014 drain gate source Tj Tcase```, then define this vector as `[1,2,3,0,5]`.

Whether to obtain current-voltage characteristics from the transfer characteristics, specified as a numeric or logical `1` (true) or `0` (false).

If you also set `'flagIdsVds'` to `1`, the function obtains the current-voltage characteristics only from transfer characteristics.

Whether to obtain current-voltage characteristics from the output characteristics, specified as a numeric or logical `1` (true) or `0` (false).

If you also set `'flagIdsVgs'` to `1`, the function obtains the current-voltage characteristics only from transfer characteristics.

Whether to return capacitance characteristics, specified as a numeric or logical `1` (true) or `0` (false).

Whether to return diode characteristics, specified as a numeric or logical `1` (true) or `0` (false).

Whether to return IGBT turn-off tail current transient, as a numeric or logical `1` (true) or `0` (false).

Range for the transfer characteristics of the MOSFET gate-source voltage, `Vgs`, or the IGBT gate-emitter voltage, `Vge`, in volts, specified as a row vector of two scalars.

Steps for the transfer characteristics of the MOSFET drain-source voltage, `Vds`, or the IGBT collector-emitter voltage, `Vce`, in volts, specified as a vector of scalars.

Range for the output characteristics of the MOSFET gate-drain voltage, `Vds`, or the IGBT collector-emitter voltage, `Vce`, in volts, specified as a row vector of two scalars.

Steps for the output characteristics of the MOSFET gate-source voltage, `Vgs`, or the IGBT gate-emitter voltage, `Vge`, in volts, specified as a vector of scalars.

Steps for the capacitance characteristics of the MOSFET gate-source voltage, `Vgs`, or the IGBT gate-emitter voltage, `Vge`, in volts, specified as as a vector of scalars.

Steps for the capacitance characteristics of the MOSFET drain-source voltage, `Vds`, or the IGBT collector-emitter voltage, `Vce`, in volts, specified as as a vector of scalars.

AC frequency of the small signal for the capacitance characteristics, in Hz, specified as a positive scalar.

AC amplitude of the small signal for the capacitance characteristics, in F, specified as a positive scalar.

Sweep range for the diode characteristics of the MOSFET gate-source voltage, `Vgs`, or the IGBT collector-emitter voltage, `Vce`, in volts, specified as a row vector of two nonpositive scalars.

IGBT collector-emitter voltage, `Vce`, in volts, for the turn-off tail current characteristics, specified as a positive scalar.

Amplitude of the pulse applied between the IGBT gate and emitter for the turn-off tail current characteristics, in volts specified as a positive scalar.

Period of the pulse applied between the IGBT gate and emitter for the turn-off tail current characteristics, in seconds, specified as a positive scalar.

Device case temperatures for all current-voltage characteristics, specified as a vector of scalars.

Simulation time for the current-voltage characteristics, in seconds, specified as a positive scalar.

Simulation step size for all current-voltage characteristics, specified as a positive scalar.

Relative tolerance parameter used in SPICE simulations, specified as a scalar.

Absolute current tolerance parameter used in SPICE simulations, specified as a scalar.

Absolute voltage tolerance parameter used in SPICE simulations, specified as a scalar.

Parallel conductance with all non-linear devices used in SPICE simulations, in `1/Ohm`, specified as a scalar.

Shunt resistance to capacitors used in SPICE simulations, in F, specified as a scalar.

## Output Arguments

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Generated lookup table data from the SPICE subcircuit file, returned as a structure with these fields:

Data that characterizes the channel of the SPICE subcircuit, returned as a structure. The function returns the `channel` structure only when you specify the name-value arguments `flagIdsVgs` or `flagIdsVds` with a value of `1`. The structure contains these fields:

MOSFET gate-source voltages, `Vgs`, or IGBT gate-emitter voltages, `Vge`, in volts, returned as a vector of scalars.

MOSFET drain-source voltages, `Vds`, or IGBT collector-emitter voltages, `Vce`, in volts, returned as a vector of scalars.

Temperatures, in `degC`, returned as a vector of scalars.

MOSFET drain-source currents, `Ids(Vgs,Vds,T)`, or IGBT collector-emitter currents, `Ice(Vge,Vce,T)`, returned as a matrix of scalars.

Data that characterizes the capacitance of the SPICE subcircuit, returned as a structure. The function returns the `capacitance` structure only when you specify the name-value argument `flagCapacitance` with a value of `1`. The structure contains these fields:

MOSFET gate-source voltages, `Vgs`, or IGBT gate-emitter voltages, `Vge`, in volts, returned as a vector of scalars.

MOSFET drain-source voltages, `Vds`, or IGBT collector-emitter voltages, `Vce`, in volts, returned as a vector of scalars.

MOSFET gate-source capacitance, `Cgs`, or IGBT gate-emitter capacitance, `Cge`, returned as a matrix of scalars.

MOSFET gate-drain capacitance, `Cgd`, or IGBT gate-collector capacitance, `Cgc`, returned as a matrix of scalars.

MOSFET drain-source capacitance, `Cds`, or IGBT collector-emitter capacitance, `Cce`, returned as a vector of scalars.

Data that characterizes the drain-source diode or the collector-emitter diode of the SPICE subcircuit, returned as a structure. The function returns the `diode` structure only when you specify the name-value argument `flagDiodeIv` with a value of `1`. The structure contains these fields:

Diode voltages, in volts, returned as a vector of scalars.

Temperatures, returned as a vector of scalars.

Tabulated diode currents, `Idiode(VVec,TVec)`, or IGBT collector-emitter currents, `Ice(Vge,Vce,T)`, in amperes, returned as a matrix of scalars.

Data that characterizes the IGBT turn-off tail current transient time, returned as a structure. The function returns the `igbtTail` structure only when you specify the name-value argument `flagTailTransient` with a value of `1`. The structure contains this field:

Time constant of the IGBT turn-off current tail transient, in seconds, returned as a positive scalar.

## Version History

Introduced in R2022a